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1 MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 motorola rf device data the rf mosfet line nCchannel enhancementCmode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2Ccarrier nCcdma performance for v dd = 26 volts, i dq = 850 ma, p out = 18 watts avg., f1 = 1960 mhz, f2 = 1962.5 mhz isC95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carrier. adjacent channels measured over a 30 khz bandwidth at f1 C885 khz and f2 +885 khz. distortion products measured over 1.2288 mhz bandwidth at f1 C2.5 mhz and f2 +2.5 mhz. peak/avg. = 9.8 db @ 0.01% probability on ccdf. output power 18 watts avg. power gain 13.0 db efficiency 23% acpr C51 db im3 C36.5 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, 1.93 ghz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent largeCsignal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drainCsource voltage v dss 65 vdc gateCsource voltage v gs C0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 273 1.56 watts w/ c storage temperature range t stg C65 to +200 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.64 c/w note C caution C mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF19085/d semiconductor technical data 1990 mhz, 90 w, 26 v lateral nCchannel rf power mosfets case 465C06, style 1 niC780 MRF19085 case 465aC06, style 1 niC780s MRF19085sr3, MRF19085lsr3 ? motorola, inc. 2002 rev 4
MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainCsource breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss 10 adc gateCsource leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 850 madc) v gs(q) 2.5 3.5 4.5 vdc drainCsource onCvoltage (v gs = 10 vdc, i d = 2 adc) v ds(on) 0.18 0.210 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs 6 s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c rss 3.6 pf functional tests (in motorola test fixture, 50 ohm system) 2Ccarrier nCcdma, 1.2288 mhz channel bandwidth carriers. peak/avg. ratio = 9.8 db @ 0.01% probability on ccdf. commonCsource amplifier power gain (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 12 13 db drain efficiency (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) 21 23 % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz); im3 measured over 1.2288 mhz bandwidth @ f1 C2.5 mhz and f2 = +2.5 mhz) imd C36.5 C35 dbc adjacent channel power ratio (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz); acpr measured over 30 khz bandwidth @ f1 C885 mhz and f2 =+885 mhz) acpr C51 C48 dbc input return loss (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) irl C12 C9 db output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 850 ma, f = 1930 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output.
3 MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic unit max typ min symbol functional tests (in motorola test fixture) twoCtone commonCsource amplifier power gain (v dd = 26 vdc, p out = 90 w pep, i dq = 850 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) g ps 13 db twoCtone drain efficiency (v dd = 26 vdc, p out = 90 w pep, i dq = 850 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) 36 % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 90 w pep, i dq = 850 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) imd C31 dbc input return loss (v dd = 26 vdc, p out = 90 w pep, i dq = 850 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) irl C12 db p out , 1 db compression point (v dd = 26 vdc, i dq = 850 ma, f = 1990 mhz) p1db 90 w
MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 4 motorola rf device data figure 1. 1930 C 1990 mhz 2Ccarrier nCcdma test circuit schematic table 1. 1930 C 1990 mhz 2Ccarrier nCcdma test circuit component designations and values part description value, p/n or dwg manufacturer b1 short ferrite bead 2743019447 fair rite c1 51 pf chip capacitor 100b510jca500x atc c2, c7 5.1 pf chip capacitors 100b5r1jca500x atc c3, c9 1000 pf chip capacitors 100b102jca500x atc c4, c10 0.1 f chip capacitors cdr33bx104akws kemet c5 0.1 f tantalum surface mount capacitor t491c105m050 kemet c6 10 pf chip capacitor 100b100jca500x atc c8 10 f tantalum surface mount capacitor t495x106k035as4394 kemet c11, c12 22 f tantalum surface mount capacitors t491x226k035as4394 kemet l1 1 turn, 20 awg, 0.100 id motorola n1, n2 type n flange mounts 3052-1648-10 omni spectra r1 1.0 k ? , 1/8 w chip resistor r2 220 k ? , 1/8 w chip resistor r3 10 ? , 1/8 w chip resistor z1 microstrip 0.750 x 0.0840 z2 microstrip 1.090 x 0.0840 z3 microstrip 0.400 x 1.400 z4 microstrip 0.520 x 0.050 z5 microstrip 0.540 x 1.133 z6 microstrip 0.400 x 0.140 z7 microstrip 0.555 x 0.0840 z8 microstrip 0.720 x 0.0840 z9 microstrip 0.560 x 0.070 board 0.030 glass teflon ? gx-0300-55-22, r = 2.55 keene pcb etched circuit boards MRF19085 rev. 4 cmr
5 MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 motorola rf device data figure 2. 1930 C 1990 mhz 2Ccarrier nCcdma test circuit component layout cut out area MRF19085
MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 6 motorola rf device data typical characteristics figure 3. 2-carrier n-cdma spectrum figure 4. 2-carrier nCcdma acpr, im3, power gain and drain efficiency versus output power figure 5. intermodulation distortion products versus output power figure 6. third order intermodulation distortion versus output power and i dq figure 7. 2-carrier n-cdma broadband performance figure 8. cw performance
7 MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 motorola rf device data figure 9. two-tone intermodulation distortion and drain efficiency versus drain supply figure 10. two-tone power gain versus output power figure 11. two-tone broadband performance
MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 8 motorola rf device data figure 12. series equivalent input and output impedance f mhz z in ? z ol * ? 1930 1960 0.75 + j2.50 0.70 + j2.40 1.05 + j1.95 1.10 + j1.85 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. 1990 0.65 + j2.35 1.05 + j1.75 ?
9 MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 motorola rf device data notes
MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 10 motorola rf device data notes
11 MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 motorola rf device data package dimensions case 465C06 issue f niC780 MRF19085

d g k c e h s f q 2x b b (flange)

aa (flange) t n (lid) m (insulator) (insulator) r (lid) case 465aC06 issue f niC780s MRF19085sr3, MRF19085lsr3

d k c e h f u (flange) 4x z (lid) 4x
b b (flange) 2x

a a (flange) t n (lid) m (insulator) r (lid) s (insulator)
MRF19085 MRF19085r3 MRF19085sr3 MRF19085lsr3 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & t rademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1C800C441C2447 japan : motorola japan ltd.; sps, technical information center, 3C20C1, minamiCaz abu. minatoCku, tokyo 106C8573 japan. 8 1C3C3440C3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t., hong ko ng. 852C26668334 technical information center: 1C800C521C6274 home page : http://www .motorola.com/semiconductors/ MRF19085/d ?

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